TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
- Representational AI photoResearchers from Taiwan's National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin materials.
- They focuses on the tiny boundary where two materials meet, which allowed them to build transistors with an extremely thin insulating layer while maintaining strong electrical performance.
- According to Science Daily, atomically thin semiconductors have been studied for more than a decade because some can be just one atom thick while still showing useful electrical properties.
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- Representational AI photoResearchers from Taiwan's National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin materials.
- They focuses on the tiny boundary where two materials meet, which allowed them to build transistors with an extremely thin insulating layer while maintaining strong electrical performance.
- According to Science Daily, atomically thin semiconductors have been studied for more than a decade because some can be just one atom thick while still showing useful electrical properties.
Sources: Times of India